PART |
Description |
Maker |
SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL SIPMOS Power-Transistor
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INFINEON[Infineon Technologies AG]
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SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30 SIPMOS Power-Transistor Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
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SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
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SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
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KSM5800 |
High performance trench technology for extermly low Rdson
|
Kersemi Electronic Co.,...
|
AM3829P |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
AM3826N |
Low rDS(on) provides higher efficiency and extends battery life
|
TY Semiconductor Co., Ltd
|
PMV185XN |
30 V, single N-channel Trench MOSFET Very fast switching Low RDSon
|
TY Semiconductor Co., Ltd
|
ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
KMDF2C03HD |
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., Ltd
|
SPD30P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 75m
|
Infineon
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